DMS3016SSSA-13【PDF 2/6 页】MOSFET N-CH SCHOT 30V 9.8A SO-8

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DMS3016SSSA

Maximum Ratings @T A = 25°C unless otherwise specified

Drain-Source Voltage

Gate-Source Voltage

Characteristic

Symbol

V DSS

V GSS

Value

30

±12

Unit

V

V

Continuous Drain Current (Note 4) V GS = 4.5V

Steady

State

T A = 25°C

T A = 85°C

I D

9.8

6.3

A

Pulsed Drain Current (Note 5)

Avalanche Current (Note 5) (Note 6)

Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH

I DM

I AR

E AR

90

13

25.4

A

A

mJ

Thermal Characteristics

Characteristic

Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)

Operating and Storage Temperature Range

Symbol

P D

R θ JA

T J , T STG

Value

1.54

81

-55 to +150

Unit

W

°C/W

°C

Electrical Characteristics @ T A = 25°C unless otherwise stated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV DSS

I DSS

I GSS

30

-

-

-

-

-

-

1.0

±100

V

mA

nA

V GS = 0V, I D = 250 μ A

V DS = 30V, V GS = 0V

V GS = ±12V, V DS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

Maximum Body-Diode + Schottky Continuous Current

V GS(th)

R DS (ON)

|Y fs |

V SD

I S

1.0

-

-

-

-

-

-

9

11

11

0.35

-

2.3

13

16

-

0.6

5

V

m Ω

S

V

A

V DS = V GS , I D = 250 μ A

V GS = 10V, I D = 9.8A

V GS = 4.5V, I D = 9.8A

V DS = 5V, I D = 9.8A

V GS = 0V, I S = 1A

-

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge V GS = 4.5V

Total Gate Charge V GS = 10V

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

C iss

C oss

C rss

R g

Q g

Q g

Q gs

Q gd

t D(on)

t r

t D(off)

t f

-

-

-

0.53

-

-

-

-

-

-

-

-

1849

158

123

2.68

18.5

43

4.7

4.0

6.62

8.73

36.41

4.69

-

-

-

4.82

-

-

-

-

-

-

-

-

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

V DS =15V, V GS = 0V,

f = 1.0MHz

V DS =0V, V GS = 0V, f = 1MHz

V DS = 15V, V GS = 10V,

I D = 9.8A

V GS = 10V, V DS = 10V,

R G = 3 ? , R L = 1.2 ?

Notes:

4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.

5. Repetitive rating, pulse width limited by junction temperature.

6. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

2 of 6

www.diodes.com

October 2010

? Diodes Incorporated

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